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https://www.selleckchem.com/products/vu0463271.html The conventional pH sensor based on the graphene ion-sensitive field-effect transistor (Gr-ISFET), which operates with an electrostatic gating at the solution-graphene interface, cannot have a pH sensitivity above the Nernst limit (∼59 mV/pH). However, for accurate detection of the pH levels of an aqueous solution, an ultrasensitive pH sensor that can exceed the theoretical limit is required. In this study, a novel Gr-ISFET-based pH sensor is fabricated using proton-permeable defect-engineered graphene. The nanocrystalline graphene (nc-Gr) with numerous grain boundaries allows protons to penetrate the graphene layer and interact with the underlying pH-dependent charge-transfer dopant layer. We analyze the pH sensitivity of nc-Gr ISFETs by adjusting the grain boundary density of graphene and the functional group (OH-, NH2-, CH3-) on the SiO2 surface, confirming an unusual negative shift of the charge-neutral point (CNP) as the pH of the solution increases and a super-Nernstian pH response (approximately -140 mV/pH) under optimized conditions.Nanophotonics provides a promising approach to advance quantum technology by replicating fundamental building blocks of nanoscale quantum optic systems in large numbers with high reproducibility on monolithic chips. While photonic integrated circuit components and single-photon detectors offer attractive performance on silicon chips, the large-scale integration of individually accessible quantum emitters has remained a challenge. Here, we demonstrate simultaneous optical access to several integrated solid-state spin systems with Purcell-enhanced coupling of single photons with high modal purity from lithographically positioned nitrogen vacancy centers into photonic integrated circuits. Photonic crystal cavities embedded in networks of tantalum pentoxide-on-insulator waveguides provide efficient interfaces to quantum emitters that allow us to optically detect magnetic resonances

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