https://www.selleckchem.com/products/pterostilbene.html The dynamic measurement range is at least seven times larger than that achieved with an EFPI built with a conventional SMF. Moreover, the SMF-SCMCF tip is robust and easy to fabricate and replicate.To exploit spatial dimension, on-chip optical modes with various spatial profiles have been utilized in optical interconnects and spatial analog computing. An integrated Fourier optical system is able to perform spatial operations. However, the reported schemes based on a subwavelength structure pose difficulty in fabrication, and the fabrication-friendly structure has been investigated only with a fundamental mode. With the complementary metal-oxide-semiconductor process, we propose an integrated 4-f system with simple geometry and a moderate minimum feature size to manipulate the mode's spatial size and position in a mode-transparent way. A size magnification of 2.5 and center-to-center position offset of 7 µm are experimentally demonstrated. Reasonable insertion loss and low inter-mode crosstalk are measured over a 30 nm bandwidth. The work in this Letter paves the way for an on-chip Fourier optical system with convenient fabrication and broadband operation.We demonstrate for the first time, to the best of our knowledge, that the optical Hall effect (OHE) can be observed in p-type monolayer (ML) hexagonal boron nitride (hBN) on a fused silica substrate by applying linearly polarized terahertz (THz) irradiation. When ML hBN is placed on fused silica, in which the incident pulsed THz field can create local and transient electromagnetic dipoles, proximity-induced interactions can be presented. The Rashba spin-orbit coupling can be enhanced, and the in-plane spin component can be induced, along with the lifting of valley degeneracy. Thus, in the presence of linearly polarized THz radiation, the nonzero transverse optical conductivity (or Hall conductivity) can be observed. We measure the THz transmission through ML hB