https://www.selleckchem.com/products/th-257.html A tunable absorber made of a nanodisk-based metasurface is proposed to realize a narrowband shortwave-infrared (SWIR) perfect absorption. By introducing a phase-change material Ge2Sb2Te5 (GST) layer, we produce a selective and active control of the optical response. It is found that the narrowband absorption of 99.9% can be achieved for amorphous GST (aGST) with a modulation depth of 54.6% at 1931 nm, which is attributed to the strong electric dipole resonance in the germanium nanodisks. Moreover, under the aGST state, the full width at half-maximum of 22 nm can be acquired for a normal TM-polarized wave, and such a nanodisk-based absorber enables a tunable operating wavelength by adjusting the geometrical parameters to realize the spectral selectivity. In addition, the nanodisk-based metasurface nanostructure, combined with a dielectric Bragg reflector with alternately stacked SiO2 and TiO2 layers, can realize the SWIR dual-band absorption for aGST and single-band absorption for crystalline GST through the adjustment of electric and magnetic resonances. The designed absorbers have the potential applications in tunable absorption filter, thermal sensing, and optical signal processing.Quantum dot solar cells are promising for next-generation photovoltaics owing to their potential for improved device efficiency related to bandgap tailoring and quantum confinement of charge carriers. Yet implementing effective photon management to increase the absorptivity of the quantum dots is instrumental. To this end, the performance of thin-film InAs/GaAs quantum dot solar cells with planar and structured back reflectors is reported. The experimental thin-film solar cells with planar reflectors exhibited a bandgap-voltage offset of 0.3 V with an open circuit voltage of 0.884 V, which is one of the highest values reported for quantum dot solar cells grown by molecular beam epitaxy to our knowledge. Using measured external quantum eff