https://www.selleckchem.com/products/vu661013.html In particular, with different bias conditions, the homojunction TFT showed bipolarity of transfer characteristics and forward/backward rectifications of output characteristics similar to p-n/n-n junctions. The high dielectric constant and high quality of the BMN ceramic layer enabled the gate to effectively modulate these different structures of MoS2 channels. The operation mechanisms of these three types of flexible TFTs were investigated. Additionally, the flexible MoS2/BMN TFTs showed good flexibility and performance stability with external strains. The results prove the great potential of integration of 2D materials, high-quality dielectric ceramics, and low-cost plastic substrates for high-performance flexible TFTs and further applications of flexible electronics.High-performance piezoelectrics are pivotal to various electronic applications including multilayer actuators, sensors, and energy harvesters. Despite the presence of high Lotgering factor F001, two key limitations to today's relaxor-PbTiO3 textured ceramics are low piezoelectric properties relative to single crystals and high texture temperature. In this work, Pb(Yb1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PYN-PMN-PT) textured ceramics with F001 ∼ 99% were synthesized at only 975 °C through liquid-phase-assisted templated grain growth, where of particular significance is that single-crystal properties, i.e., very large electrostrain Smax/Emax ∼ 1830 pm V-1, giant piezoelectric figure of merit d33 × g33 ∼ 61.3 × 10-12 m2 N-1, high electromechanical coupling k33 ∼ 0.90, and Curie temperature Tc ∼ 205 °C, were simultaneously achieved. Especially, the Smax/Emax and d33 × g33 values correspond to ∼180% enhancement as compared to the regularly 1200 °C-textured ceramics with F001 ∼ 96%, representing the highest values ever reported on piezoceramics. Phase-field simulation revealed that grain misorientation has a stronger influence on piezoelectricity than texture