https://www.selleckchem.com/products/cc-90001.html This study investigated the multilayer growth and properties of ZnS and MgF2using glancing angle deposition. We used deposition angles of 85° to 89° for ZnS and 70° to 88° for MgF2to obtain the structural properties. The film properties primarily followed Tait's rule with a deposition angle of less than 87° in the vapor flux. However, film growth with a vapor flux angle of 88° to 89° followed the tangent rule. Mathematical and cross-sectional scanning electron microscopy (SEM) examinations found a transition point for the growth mechanisms at 87°, which comes from an extreme angle property for glancing angle deposition. We also performed mathematical derivations for the well-known empirical formula of the tangent rule and its generalized version. To stabilize the interface structure and surface roughness of multilayer structures, film growth at slightly tilted angles is recommended. Based on these results, an optical structure was designed, fabricated, and analyzed for a 550-nm wavelength pass filter on a glass substrate. © 2020 IOP Publishing Ltd.A study of a hybrid ZnCdSeS/ZnS quantum dot light-emitting diodes (QLEDs) device fabricated with indium tin oxide (ITO)-free transparent electrodes is presented. Al-doped zinc oxide (AZO) prepared by magnetron sputtering is adopted in anode transparent electrodes for green QLEDs with different sputtering pressures. The Kelvin probe force microscopy measurement shows that AZO has a work function of approximately 5.0 eV. The AZO/poly(ethylene-dioxythiophene)/polystyrenesulfonate (PEDOTPSS) interface can be adjusted by the sputtering pressures, which was confirmed by the hole-only devices. The AZO films with low surface roughness can form a good AZO/PEDOTPSS interface, which can increase the holes' injection, and result in improved charge balance. The maximum current efficiency, luminance and external quantum efficiency of the optimized QLEDs devices under a sputtering pressu