https://www.selleckchem.com/products/larotrectinib.html Majority carrier depletion has been proposed as a method to suppress the dark current originating from quasi-neutral regions in HgCdTe infrared focal plane array detectors. However, a very low doping level is usually required for the absorber layer, a task quite difficult to achieve in realizations. In order to address this point, we performed combined electromagnetic and electric simulations of a planar $ 5 \times 5 $5×5 pixel miniarray with 5 µm wide square pixels, assessing the effect of the absorber thickness, its doping level in the interval $ N_D = [10^14,10^15] \;\rm cm^ - 3 $ND=[1014,1015]cm-3, and temperature in the interval 140 K-230 K, both in the dark and under illumination. Looking for a trade-off, we found that the path towards high-temperature operation has quite stringent requirements on the residual doping, whereas a reduction of the absorber thickness helps only moderately to reduce the dark current. Under illumination, interpixel cross talk is only slightly cut down by a decrease of temperature or absorber doping in the considered intervals, whereas it gets more effectively reduced by thinning the absorber.Speckle reduction is a crucial technique, since the presence of speckle disturbs the quality of the reconstruction in digital holography. In this paper, we present a redundant speckle elimination method to suppress the speckle noise. For the same position in each of the reconstructed sub-images, we consider pixels with the same gray value as information with the same speckle distribution. Therefore, a speckle-suppressed gray value can be obtained by extracting pixels with different gray values and then averaging. Through theoretical analysis and experiments, we demonstrate that speckle contrast can be decreased significantly by using the proposed method. Moreover, we show that the despeckle strength of the proposed method highly depends on the number of binary masks. These results indicate