Exosomes have become the most ideal analysis target for liquid biopsy since they carry a large amount of genetic materials. The study on exosomes has great significance for cancer diagnosis and prognosis. However, the extremely low concentration renders the development of a robust exosomes enrichment technique, with the merits of low nonspecific cell adhesion, high-capture efficiency, and easy nondestructive release of captured exosomes, of vital significance. We successfully designed and developed a novel Tim4@ILI-01 immunoaffinity flake material. First, a strongly hydrophilic ILI-01 MOFs matrix material was fabricated with cationic ionic liquid 1,3-bis(4-carboxybutyl)imidazolium bromide as the organic ligand. The nonspecific adsorption of the ILI-01 MOFs material was only 0.7% after two washings with a neutral buffer. Moreover, based on the inherent abundant carboxyl groups on the ILI-01 MOFs flake, they can be facilely functionalized with an anti-Tim4 antibody with the bonding efficiency of 82.4%. The capture efficiency of the developed Tim4@ILI-01 immunoaffinity material for exosomes reached 85.2%, which is 5.2 times higher than that via the gold standard ultracentrifugation method. Furthermore, based on the Ca2+-dependent characteristic of the binding between the Tim4@ILI-01 immunoaffinity material and phosphatidylserine (PS) on the surfaces of exosomes, the captured exosomes can be easily released with the addition of a chelating agent under neutral eluent conditions. Thus, the captured exosomes maintained good biological activity. The developed Tim4@ILI-01 immunoaffinity flake was successfully applied for enrichment of exosomes from serums of healthy persons and lung adenocarcinoma patients. The levels of the expressed CD44 gene significantly changed under different stages of lung adenocarcinoma cancer. All these results demonstrate that the Tim4@ILI-01 immunoaffinity flake is a robust enrichment material and has a good potential in practical clinical applications.Single crystal wafers, such as silicon, are the fundamental carriers of advanced electronic devices.  https://www.selleckchem.com/products/bms309403.html  However, these wafers exhibit rigidity without mechanical flexibility, limiting their applications in flexible electronics. Here, we propose a new approach to fabricate 1.5 in. flexible functional zinc oxide (ZnO) single crystal wafers with high electron mobility (>100 cm2 V-1 s-1) and optical transparency (>80%) by a combination of thin-film deposition, a chemical solution method, and surficial treatment. The uniformity of the flexible single crystal wafers is examined by an advanced scanning X-ray diffraction technique and photoluminescence spectroscopy. The transport properties of ZnO flexible single crystal wafers retain their pristine states under various bending conditions, including cyclability and endurability. This approach demonstrates a breakthrough in the fabrication of the flexible single crystal wafers for future flexible optoelectronic applications.W atoms/clusters are employed to in situ assist the development of layered vertically aligned carbon nanotube arrays (VACNTs) through hot-filament-assisted chemical vapor deposition (HFCVD) with liquid binary Fe3O4/AlOx catalysts. The hot W filament was utilized to in situ evaporate atomic W and form W clusters on Fe catalysts, which have a strong impact on the growth of layered VACNT arrays. The migration and Ostwald ripening of Fe catalysts are found to be suppressed immediately with more W clusters deposition during CNT growth. Through controlling the deposition of W clusters, the electrochemical energy storage performance of as-prepared layered VACNT arrays is also tunable as electrodes of ion-based supercapacitors. The layered VACNT arrays can achieve a high capacity of 83.1 mF cm-2 and possess desirable rate performance due to the suitable hot filament condition (55 W for 90 s). This work provides a new perspective to in-depth understand the behavior of W filament during HFCVD and the significant role of the in situ generated W clusters on the growth of CNTs by maintaining the catalytic activity and structure of catalysts.Here, we report that a triarylamine-based polymer, poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (PolyTPD), is effectively doped with tris(pentafluorophenyl)borane (BCF) and the doping level is dependent on the molar ratio of BCF to PolyTPD (repeating unit). The doping reaction is performed at 25 °C at the solution states using chlorobenzene solvent by varying the BCF molar ratio up to 2.0. The resulting PolyTPDBCF films show new broad optical absorption peaks at a wavelength of λ = 1000-3300 nm, covering the full range of short-wave infrared (SWIR, λ = 1400-3000 nm), which is stronger at a higher BCF molar ratio. Spectroscopic characterizations confirm the generation of radicals (single electrons) in PolyTPD by BCF doping, which resulted in a gradual shift of the highest occupied molecular orbital (HOMO) energy level with the BCF molar ratio. The PolyTPDBCF films are applied as a gate-sensing layer (GSL) in the geometry of organic field-effect transistors (OFETs), leading to SWIR-sensing organic phototransistors (OPTRs). The optimized SWIR-OPTRs with the PolyTPDBCF GSLs (BCF molar ratio = 0.5) can detect SWIR light with maximum photoresponsivities of 583.4 mA/W (λ = 1500 nm), 695.4 mA/W (λ = 2000 nm), and 829.4 mA/W (λ = 2500 nm).Radio frequency (RF) microelectromechanical systems (MEMS) based on Al1-xScxN are replacing AlN-based devices because of their higher achievable bandwidths, suitable for the fifth-generation (5G) mobile network. However, overheating of Al1-xScxN film bulk acoustic resonators (FBARs) used in RF MEMS filters limits power handling and thus the phone's ability to operate in an increasingly congested RF environment while maintaining its maximum data transmission rate. In this work, the ramifications of tailoring of the piezoelectric response and microstructure of Al1-xScxN films on the thermal transport have been studied. The thermal conductivity of Al1-xScxN films (3-8 W m-1 K-1) grown by reactive sputter deposition was found to be orders of magnitude lower than that for c-axis-textured AlN films due to alloying effects. The film thickness dependence of the thermal conductivity suggests that higher frequency FBAR structures may suffer from limited power handling due to exacerbated overheating concerns. The reduction of the abnormally oriented grain (AOG) density was found to have a modest effect on the measured thermal conductivity.