https://www.selleckchem.com/products/wnk-in-11.html 1%, as 2 wt% of a 12 nm GNP is incorporated. Remarkably, designed blue OLED also exhibited an increment of 50% and 35% in power efficacy at 100 and 1,000 cd/m2, respectively, for same device structure. The reason why the enhancement is marked may be attributed to a strong absorption of the short-wavelength emission from the device by the gold nano particles, which in turn initiates a strong surface plasmon resonance effect, leading to a high device efficiency. © 2020 IOP Publishing Ltd.Ge/Sb atomic intermixing in interfacial cationic layers is a common phenomenon for GeTe-Sb2Te3 superlattice (GST-SL) used in memory devices. In this paper, we explored the effect of Ge/Sb intermixing on the phase change behavior of GST-SL upon the heating-quenching procedure. Four interfacial intermixing models of Kooi, Ferro, Petrov and Inverted Petrov with different Ge/Sb intermixing ratios (25/75, 50/50 and 75/25) were developed based on the ab initio molecular dynamics. The structural evolution indicated that the Ge/Sb interfacial intermixing could facilitate the structure changes especially for 50/50 Ge/Sb intermixed models. When quenching from 1500 K, more 4-fold Ge-centered octahedrons were produced than tetrahedrons, and the electron localization function further proved that the distorted of Ge(Sb)-centered 6-fold octahedrons were caused by the asymmetrical interactions of Ge-Ge/Sb and Ge-Te. A relatively large Te p orbital contribution in coexisted Ge/Te layer led to a narrower bandgap. In addition, different Ge/Sb atom intermixed ratio which affected the electronic local structure, led to the discrepancy in the initial atom movement of Sb or Ge movement near the gap. The present studies enrich the understanding of Ge/Sb interfacial atomic intermixing effects in GST-SL structural changes. © 2020 IOP Publishing Ltd.We report on the direct correlation between the structural and optical properties of single, as-grown core-multi