https://www.selleckchem.com/products/fht-1015.html In this article, we have demonstrated a solid carbon source such as camphor as a natural precursor to synthesize a large area mono/bi-layer graphene (MLG) sheet to fabricate nanowire junction based near infrared photodetectors (NIRPDs). In order to increase the surface-to-volume ratio, we have developed Si-nanowire arrays (SiNWAs) of varying lengths by etching planar Si. Then, the camphor based MLG/Si and MLG/SiNWAs schottky junction photodetectors have been fabricated to achieve efficient response with self-driven properties in the near infrared (NIR) regime. Due to a balance between light absorption capability and surface recombination centres, devices having SiNWAs obtained by etching for 30 min shows a better photoresponse, sensitivity and detectivity. Fabricated NIRPDs can also be functioned as self-driven device which are highly responsive and very stable at low optical power signals upto 2V with a fast rise and decay time of 34/13 ms. A tremendous enhancement has been witnessed from 36 µA/W to 22 mA/W in the responsivity at 0V for MLG/30 min SiNWAs than planar MLG/Si PDs indicating an important development of self-driven NIRPDs based on camphor based MLG for future optoelectronic devices. © 2020 IOP Publishing Ltd.The configurations of core/shell nanowires (NWs) and quantum dots (QDs) decorating NWs have found great applications in forming optoelectronic devices thanks to their superior performances, and the combination of the two configurations would expect to bring more benefits. However, the nanometer-scale electrostatic properties of the QD/buffer layer/NW heterostructures are still un-revealed. In this study, the InAs QDs decorating GaAs/AlAs core/shell NWs are systemically studied both experimentally and theoretically. The layered atomic structures, chemical information, and anisotropic strain conditions are characterized by comprehensive transmission electron microscopy (TEM) techniques. Quantitative e