https://www.selleckchem.com/products/gs-441524.html These results indicate that the anomalous edge enhancing effect is jointly caused by the pileup effect and the CS circuit that introduces negative correlations between adjacent pixels. When the input flux is high enough to deliver photons to multiple adjacent pixels within the same deadtime period, the CS mode may treat the coincident x-rays as shared charges and thus introduce count losses in addition to the well-known pileup count loss. When a high contrast object partially blocks certain pixels from x-rays, the adjacent unblocked pixels have an increased probability of registering counts as a result of the negative correlation. This leads to a peak on the ESF at a pixel-to-edge distance half of the pixel pitch.Both poor electron conductivity and low ion diffusion of electrode materials are two main issues limiting the rate performance of pseudocapacitors. The present work reports the design and fabrication of hierarchically nano-architectured electrodes consisting of sulfide vacancies enhanced Ni-Co-S nanoparticle covering bent nickel nano-forest (BNNF). We propose new insight into vastly increased ion-accessible active sites and fast charge storage/delivery enhanced the reaction kinetics. The Ni-Co-S@BNNF electrode exhibits extremely high rate performance with 90.1% capacity retention from 1 to 20 A g-1, and even still remains 83.6% capacity at 40 A g-1, much superior to reported NiCo2S4-based electrodes. The high rate performance is attributed to the unique nano-architecture providing increased ion availability of electrochemically active sites and high conductivity for fast electron transport. Especially the electrode achieves remarkable long-term cycle stability with more than 100% initial capacity value after 5000 cycles at 5 A g-1and exhibits excellent cycle reversibility even at 20 A g-1. Goog cycle stability should be attributed to the sulfide vacancies in Ni-Co-S nano-branches and the electrode architec