https://www.selleckchem.com/products/ots514.html Besides, due to the inherent property of coordination through nitrogen present on the MCN, FePc@MCN shows excellent stability even after 3000 cyclic voltammetry (CV) cycles. FePc@MCN was found to have a better methanol tolerance in comparison to Pt-C in basic medium. CoPc@MCN shows a highly selective two-electron reduction reaction in both acidic and basic media at lower overpotential than many of the reported catalysts for the two-electron oxygen reduction. Therefore, these materials (FePc@MCN and CoPc@MCN) can be used as suitable alternatives to replace Pt and other expensive materials in ORR and related applications.A digital etching method was proposed to achieve excellent control of etching depth. The digital etching characteristics of p+-Si and Si0.7Ge0.3 using a combination of HNO3 oxidation and buffered oxide etching oxide removal processes were investigated. Experimental results showed that oxidation saturates as time goes on because of low activation energy and its diffusion-limited characteristic. An oxidation model was developed to describe the wet oxidation process with nitric acid. The model was calibrated with experimental data, and the oxidation saturation time, final oxide thickness, and selectivity between Si0.7Ge0.3 and p+-Si were obtained. In Si0.7Ge0.3/p+-Si stacks, the saturated relative etched depth per cycle was 0.5 nm (four monolayers), and variation between experiments was about 4% after saturation. A corrected selectivity calculation formula was also proposed, and the calculated selectivity was 3.7-7.7 for different oxidation times, which was the same as the selectivity obtained from our oxidation model. The proposed model can be used to analyze process variations and repeatability, and it can provide credible guidance for the design of other wet digital etching experiments.We present an investigation of the microstructure and rheological behavior of catalyst inks consisting of Fe-N-C platin