https://www.selleckchem.com/products/pcna-i1.html It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of the vertical TFETs. This paper demonstrates a dual material gate heterogeneous dielectric vertical TFET (DMG-HD-VTFET) with a lightly doped source-pocket. The proposed structure adopts a GaSb/GaAs0.5Sb0.5 heterojunction at the source and pocket to improve the band-to-band tunneling (BTBT) rate; at the same time, the gate electrode is divided into two parts, namely a tunnel gate (M1) and control gate (M2) with work functions ΦM1 and ΦM2, where ΦM1 > ΦM2. In addition, further performance enhancement in the proposed device is realized by a heterogeneous dielectric corresponding to a dual material gate. Simulation results indicate that DMG-HD-VTFET and HD-VTFET possess superior metrics in terms of DC (Direct Current) and RF (Radio Frequency) performance as compared with conventional VTFET. As a result, the ON-state current of 2.92 × 10-4 A/μm, transconductance of 6.46 × 10-4 S/μm, and average subthreshold swing (SSave) of 18.1 mV/Dec at low drain voltage can be obtained. At the same time, DMG-HD-VTFET could achieve a maximum fT of 459 GHz at 0.72 V gate-to-source voltage (Vgs) and a maximum gain bandwidth (GBW) of 35 GHz at Vgs = 0.6 V, respectively. So, the proposed structure will have a great potential to boost the device performance of traditional vertical TFETs.In this work, a green extraction technique, subcritical water extraction (SBWE), was employed to extract active pharmaceutical ingredients (APIs) from an important Chinese medicinal herb, Salvia miltiorrhiza (danshen), at various temperatures. The APIs included tanshinone I, tanshinone IIA, protocatechualdehyde, caffeic acid, and ferulic acid. Traditional herbal decoction (THD) of Salvia miltiorrhiza was also carrie