Black phosphorus (BP), a prosperous two-dimensional optoelectronic material, has been deeply developed for various optoelectronics applications. Here, we demonstrate a sub-hundred nanosecond passively Q-switched Er-doped all-fiber laser with BP as the saturable absorber (SA). The BP-SA is fabricated by a controllable optical deposition technique. To achieve the sub-hundred nanosecond Q-switching output, we deliberately enlarge the modulation depth of the BP-SA by suitably increasing the time and laser power of the optical deposition and shortening the laser cavity length with an integrated multifunctional component. A stable Q-switched pulse train was obtained with a pulse duration as narrow as 91 ns, and the Q-switched lasing characteristics based on the BP-SA have also been investigated and discussed. The experimental results indicate that the BP material can be employed as an effective SA for the nanosecond pulse generation.We offer here an accurate quantitative model of the RIA (radiation-induced absorption) at low dose-rate (below 1 kGy) that experience the most common erbium-doped fibers (Ge-Al-Er-doped silica) under radiations. It addresses the degradation mechanisms of the glass fiber, especially the influence of its doping elements versus its sensitivity to radiations. Moreover, it depends mainly on macroscopic quantities coming from literature or experiments. For these two reasons, it is a reliable and efficient tool for the engineering of erbium-doped fibers (erbium-free fibers too) exposed to ionizing radiations and is validated in this paper by comparing the modelisation results to RIA experiments on 14 Er-doped optical fiber samples, in which composition changes a lot from one sample to another (in the range 0-25%wt for Ge, 0-10%wt for Al and 0-1500ppm for Er).Due to their excellent physical and chemical properties, graphene sheets are widely used in industry, which makes detection important to guarantee their performance. Atomic force microscopy, scanning electron microscopy, and Raman spectroscopy are the most common detection methods, which is either time-consuming or easily destructive. In this work, we presented a fast and nondestructive method to detect single graphene sheets by using plasmonic imaging. Dual channel sampling plasmonic imaging combining the image processing algorithm is used to improve the deterioration from propagation length of surface plasmon polaritons and reconstruct the complete morphology of single graphene sheets. The fast and nondestructive detection method paves the way to applications of graphene, and can be extended to the detections of two-dimensional materials, single biological molecule, viruses, and nanomaterials.This study demonstrates that selective-area Si implantation performed on the GaN templates instead of conventional dielectric layers, such as SiO2 or SiNx, serves as the mask layer for the epitaxial lateral overgrowth (ELOG) process. Although the substantial mask layer is absent on the templates, selective growth initially occurs on the implantation-free area and then evolves a lateral overgrowth on the Si-implanted area during the regrowth process. This selective growth is attributed to that the crystal structure of the Si-implanted area subjected to the high doses of ion bombardment produces an amorphous surface layer, thereby leading to a lattice mismatch to the regrown GaN layer. Microstructural analyses reveal that the density of the threading dislocations above the Si-implanted regions is markedly lower than the GaN layer in the implantation-free regions. Consequentially, UV LEDs fabricated on the Si-implanted GaN templates exhibit relatively higher light output and lower leakage current compared with those of LEDs grown on ELOG-free GaN templates.In this paper, we have derived the analytical formulae for the cross-spectral densities of partially coherent Gaussian vortex beams propagating in a gradient-index (GRIN) fiber. In numerical analysis, the variations of the intensity and the phase distributions are demonstrated to illustrate the change in singularities within a GRIN fiber. It turns out that the beam intensity and phase distribution change periodically in the propagation process.  https://www.selleckchem.com/products/cnqx.html  The partially coherent Gaussian vortex beams do not typically possess the center intensity zero in the focal plane, which usually called 'hidden' singularities in intensities detection. We demonstrated the phase singularities more clearly by the phase distribution, one finds that the phase vortex of a partially coherent beam will crack near the focus, and opposite topological charge will be generated, we attribute to the wave-front decomposition and reconstruction of the vortex beams by the GRIN fiber. Our results show that the change in phase singularities not only affected by the GRIN fiber, but also by the initial coherence of the beam source, and high initial coherence will be more conducive to maintaining the phase singularities in the propagation. Our results may find applications in singular optics, wave-front reconstruction and optical fiber communications.We study double ionization (DI) dynamics of vibrating HeH+ versus its isotopic variant HeT+ in strong laser fields numerically. Our simulations show that for both cases, these two electrons in DI prefer to release together along the H(T) side. At the same time, however, the single ionization (SI) is preferred when the first electron escapes along the He side. This potential mechanism is attributed to the interplay of the rescattering of the first electron and the Coulomb induced large ionization time lag. On the other hand, the nuclear motion increases the contributions of these two electrons releasing together along the He side. This effect differentiates DI of HeH+ from HeT+.As an important figure of merit for characterizing the quantized collective behaviors of the wavefunction, Chern number is the topological invariant of quantum Hall insulators. Chern number also identifies the topological properties of the photonic topological insulators (PTIs), thus it is of crucial importance in PTI design. In this paper, we develop a first principle computatioal method for the Chern number of 2D gyrotropic photonic crystals (PCs), starting from the Maxwell's equations. Firstly, we solve the Hermitian generalized eigenvalue equation reformulated from the Maxwell's equations by using the full-wave finite-difference frequency-domain (FDFD) method. Then the Chern number is obtained by calculating the integral of Berry curvature over the first Brillouin zone. Numerical examples of both transverse-electric (TE) and transverse-magnetic (TM) modes are demonstrated, where convergent Chern numbers can be obtained using rather coarse grids, thus validating the efficiency and accuracy of the proposed method.